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boron phosphide is an important semiconductor with excellent technological properties. It is a promising material for use in many electronic applications, especially photovoltaic cells and energy storage devices. It has the highest band gap of any element in the periodic table and exhibits excellent spectroscopic properties such as high electron mobility, strong absorption, and good electron emission.
Nanostructured boron phosphide Films Using Radio Frequency Reactive Magnetron Sputtering with Different Gas Flow Ratios (PH 3/Ar) at Lower Temperature and Structural Characterization
Smooth amorphous boron phosphide films can be grown on silicon substrate by radio frequency reactive magnetron sputtering with hydrogen phosphine at various gas flow ratios (PH 3/Ar). Several chemical compositions, microstructure and mechanical properties were characterized by X-ray photoelectron spectroscopy, X-ray diffraction, Raman spectra, surface profilometer and nano-indenter. The atomic ratio and hardness of the films were found to be significantly enhanced as the gas flow ratio was increased from 3/50 to 15/50.
DFT Studies of boron phosphide Nanotubes with Chiral Index “n” Towards Optical Devices and Molecular Beam Epitaxy for 3C-SiC Based Systems
In this study, we used density functional theory to analyze the structural and electronic properties of armchair- and zigzag-type boron phosphide nanotubes (BPNTs) as functions of chirality. The DFT calculations were performed using the 6-31G(d) divided valence basis set. The results demonstrate that the diameter of BPNTs increases linearly with n, which is indicative of the molecular structure and the structural stability.
The ionization potential of pure B12P12 is 6.83 eV, and the electron affinity decreases to 2.33 eV for M1, 1.57 eV for M2, 1.58 eV for M3, and 2.13 eV for M4. The adsorption of Zn on pristine B12P12 and SO2 on Zn-doped B12P12 increases ionization potential and electron affinity.