The Applications of Aluminum Niitride

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What is it?

Aluminum Nitride

Aluminum nitride or covalent bond compounds, chemical formula is AIN, is an atomic structure that is non-toxic, white, or off-white.

Aluminum Nitride has the following main features

AlN can be stored at temperatures up to 2200 degrees Celsius. The strength of AlN at room temperature is high. With increasing temperatures, it decreases slowly. It is an excellent thermal shock material because it has a low thermal conductivity and small thermal expansion coefficient. It is strong in resisting corrosion to molten steel and makes an excellent crucible material for casting aluminum, pure iron or aluminum alloy. Aluminum nitride, which is an excellent electrical insulator and has good dielectric properties, is also promising as a potential electrical component. The aluminum nitride coating protects the gallium arsenide substrate from ionization during annealing. Aluminum nitride also acts as a catalyst in the conversion of hexagonal to cubic boron nutride. At room temperature it reacts slowly with liquid water. Aluminum powder can be made in nitrogen atmosphere or ammonia at 8001000. It is white to gray-blue and can be used as a catalyst. It can also be produced by reaction of Al2O3C–N2 system at 16001750. The product is off-white. Or by the vapor phase reaction of aluminum chloride with ammonia. The vapor phase deposition method for AlCl3/NH3 can produce the coating.

Aluminum Nitride Properties

Other Titles
Aluminium nitride


Combination Formula

Molecular Weight

Powders from pale yellow to white

Melting Point
2200 degC

Boiling Point
2517 degC (dec.)

2.9 to 33% g/cm3

Solubility of H2O

Electrical Resistivity
10-12 10x 10x O.m

Poisson’s Ratio
0.21 to $0.31

Specific heat
780 J/kg-K

Thermal Conductivity
80-200 W/m/K

Thermal Expansion
4.2 to 5.4 um/mK

Young’s Modulus
330 GPa



AlN powder CAS 24304 00-5

Aluminum Niitride

The majority of current research is focused on developing a semiconductor-based light emitting device (gallium nutride or alloy aluminum gallium nanonitride) that can operate in ultraviolet light with a wavelength up to 250 nanometers. An inefficient diode can emit light up to 210 nm [1] as reported in May 2006. An aluminum nitride single crystal has an energy difference of 6.2eV, measured by the reflection of UV rays. In theory, this energy gap allows waves with wavelengths of around 200 nanometers to pass through. However, commercial implementation presents many difficulties. Aluminum nitride has many uses in optoelectronic engineering. This includes as dielectric layers for optical storage interfaces and electronic sub-systems. Also, it is used in military applications as chip carriers with high thermal conductivity.

The properties of aluminum Nitride’s piezoelectric effects make epitaxial stretching of aluminum Nitride crystals a good choice for surface acoustic-wave detectors. The detectors can be placed on silicon wafers. It is difficult to produce thin films reliably in these locations.

Aluminum nitride clays can be used for heat exchanger materials and high-temperature structural parts.

It can be used to resist corrosion properties of aluminum, iron, and alloys.

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